? 2011 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 600 v v dgr t j = 25 c to 150 c, r gs = 1m 600 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c 66 a i dm t c = 25 c, pulse width limited by t jm 200 a i a t c = 25 c40a e as t c = 25 c2j dv/dt i s i dm , v dd v dss , t j 150 c 35 v/ns p d t c = 25 c 960 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c v isol 50/60 hz, rms, t = 1minute 2500 v~ i isol 1ma, t = 1s 3000 v~ m d mounting torque for base plate 1.5/13 nm/lb.in. terminal connection torque 1.3/11.5 nm/lb.in. weight 30 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 600 v v gs(th) v ds = v gs , i d = 8ma 3.0 5.0 v i gss v gs = 30v, v ds = 0v 200 na i dss v ds = v dss , v gs = 0v 50 a t j = 125 c 4 ma r ds(on) v gs = 10v, i d = 40a, note 1 70 m IXFN80N60P3 v dss = 600v i d25 = 66a r ds(on) 70m t rr 250ns ds100356(07/11) n-channel enhancement mode fast intrinsic rectifier features z international standard package z low intrinsic gate resistance z minibloc with aluminum nitride isolation z dynamic dv/dt rating z avalanche rated z fast intrinsic rectifier z low q g z low r ds(on) z low drain-to-tab capacitance z low package inductance advantages z high power density z easy to mount z space savings applications z dc-dc converters z battery chargers z switch-mode and resonant-mode power supplies z uninterrupted power supplies z ac motor drives z high speed power switching applications advance technical information minibloc e153432 g d s s g = gate d = drain s = source either source terminal s can be used as the source terminal or the kelvin source (gate return) terminal. polar3 tm hiperfet tm power mosfet
IXFN80N60P3 ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. (m4 screws (4x) supplied) sot-227b (ixfn) outline source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 80 a i sm repetitive, pulse width limited by t jm 320 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 250 ns q rm 1.4 c i rm 13.0 a i f = 40a, -di/dt = 100a/ s v r = 100v, v gs = 0v symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 40a, note 1 55 90 s c iss 13.1 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 1240 pf c rss 5.0 pf r gi gate input resistance 1.0 t d(on) 48 ns t r 25 ns t d(off) 87 ns t f 8 ns q g(on) 190 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 40a 56 nc q gd 48 nc r thjc 0.13 c/w r thcs 0.05 c/w resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 40a r g = 1 (external)
? 2011 ixys corporation, all rights reserved IXFN80N60P3 fig. 1. output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 80 0123456 v ds - volts i d - amperes v gs = 10v 7v 5 v 6 v fig. 2. extended output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 160 180 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 8v 6 v 5 v 7 v fig. 3. output characteristics @ t j = 125oc 0 10 20 30 40 50 60 70 80 0 2 4 6 8 101214 v ds - volts i d - amperes 5 v 6v 4v v gs = 10v 7v fig. 4. r ds(on) normalized to i d = 40a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 80a i d = 40a fig. 5. r ds(on) normalized to i d = 40a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0 20 40 60 80 100 120 140 160 180 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 10 20 30 40 50 60 70 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
IXFN80N60P3 ixys reserves the right to change limits, test conditions, and dimensions. fig. 7. input admittance 0 20 40 60 80 100 120 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 20 40 60 80 100 120 140 160 0 20406080100120 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 40 80 120 160 200 240 0.30.40.50.60.70.80.91.01.11.21.3 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20406080100120140160180200 q g - nanocoulombs v gs - volts v ds = 300v i d = 40a i g = 10ma fig. 11. capacitance 1 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 1000 10 100 1,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 100s 1ms r ds(on) limit
? 2011 ixys corporation, all rights reserved ixys ref: f_80n60p3(w9) 3-10-11 IXFN80N60P3 fig. 13. maximum transient thermal impedance 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 13. maximum transient thermal impedance aaaaa 0.2
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